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IGBT 100A 600V MIT/SKM100GB030 SKM100GB12V IGBT Modules SEMITRANS 2
IGBT 100A1200V SKM100GB12T4 SKM100GB12T4 IGBT Modules SEMITRANS 2
IGBT 150A 600V MIT/SKM145GB066 SKM145GB066D IGBT Modules SEMITRANS 2
SKM145GB066D
IGBT Modules SEMITRANS 2 (94x34x30)
| Part Number | 22890045 |
| Product Status | In production |
| Housing | SEMITRANS 2 (94x34x30) |
| (LLxBBxHH) | 94x34x30 |
| Switches | Half Bridge |
| VCES in V | 600 |
| ICnom in A | 150 |
| Technology | IGBT 3 (Trench) |
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IGBT 200A 600V MIT/SKM195GB066 SKM195GB066D IGBT Module, Half Bridge, 265 A, 1.45 V, 175 °C, Module
SKM195GB066D
IGBT Module, Half Bridge, 265 A, 1.45 V, 175 °C, Module
Image is for illustrative purposes only. Please refer to product description.
Manufacturer:SEMIKRON
Manufacturer Part No:SKM195GB066D
Order Code:2423691
Technical Datasheet: SKM195GB066D Datasheet
Product details
Dual IGBT Modules
A range of SEMITOP® IGBT modules from Semikron incorporating two series-connected (half bridge) IGBT devices. The modules are available in a wide range of voltage and current ratings and are suitable for a variety of power switching applications such as AC inverter motor drives and Uninterruptible Power Supplies.
IGBT Modules, Semikron
Specifications
Brand
Semikron
Maximum Continuous Collector Current
265 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Package Type
SEMITRANS2
Configuration
Dual Half Bridge
Mounting Type
Panel Mount
Channel Type
N
Pin Count
7
Transistor Configuration
Series
Dimensions
94 x 34 x 30.5mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+175 °C
INVERTER CONTROL CARD, FOR EXIDE ,V GUARD,AMARON, WHIRLPOOL,KEVIN
IR Sensor Module
- Features of IR Sensor Module:-
- When the module detects obstacles in front of the signal, the circuit board green indicator light level, while the OUT port continuous output low-level signals, the module detects a distance of 2 ~ 10cm, detection angle 35 °, the detection distance can be potential adjustment with adjustment potentiometer clockwise, the increase in detection distance; counterclockwise adjustment potentiometer, the detection distance decreased.
- the sensor active infrared reflection detection, target reflectivity and shape of the detection distance of the key. The black minimum detection range, white maximum; small area object distance is small, a large area from the large.
- The sensor module output port OUT can be directly connected with the microcontroller IO port can also be driven directly to a 5V relay; Connection: VCC-VCC; GND-GND; OUT-IO.
- The comparator using LM393, stable.
- 3-5V DC power supply module can be used. When the power is turned on, the red power LED is lit.
- With the screw holes of 3mm, easy to install.
- Board size: 3.1CM * 1.5CM.
- Each module in the delivery has threshold comparator voltage adjustable via potentiometer, special circumstances, please do not adjust the potentiometer.
IR2153 IC – Self Oscillating Half Bridge Driver IC
IRF3205 MOSFET – 55V 110A N-Channel HEXFET Power MOSFET
IRF3415 MOSFET – 150V 43A N-Channel HEXFET Power MOSFET
IRF3710 MOSFET 100V 57A N-Channel MOSFET Transistor
IRF3710 is anN-Channel Power MOSFET which utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area, this design enables the transistor for fast switching speeds and ruggedized device design. IRF3710 being extremely efficient and reliable device, therefore used in wide variety of applications. Even the TO-220 package is universally preferred for many commercial-industrial applications at power dissipation levels to Roughly 50 watts. The low thermal resistance and low package cost of the TO-220 bring about its acceptance across the industry.
IRF4905PBF
IRF530N IC MOSFET
- 1. Ultra Low On-Resistance : -rDS(ON)= 0.064Ω, VGS = 10V 2. Simulation Models (1) Temperature Compensated PSPICE and SABER Electrical Models (2) Spice and SABER Thermal Impedance Models 3. Peak Current vs Pulse Width Curve 4. UIS Rating Curve Absolute Maximum Ratings 1. Drain to Source Voltage : VDSS = 100 V 2. Drain to Gate Voltage (RGS = 20kΩ): VDGR = 100 V 3. Gate to Source Voltage : VGS = ±20 V 4. Drain Current : ID = 22A 5. Power Dissipation: Pd = 85 W
IRF730 MOSFET N-Channel Power MOSFET
IRF740 – 400V 10A N-Channel Power MOSFET
IRF830 – 500V 4.5A N-Channel Power MOSFET
Features/Specs:
- Product Type: MOSFET
- Transistor Polarity: N-Channel
- Number of Channels: 1 Channel
- Drain-Source Breakdown Voltage: 500V
- Continuous Drain Current: 4.5A
- Drain-Source Resistance: 1.5 Ohms
- Gate-Source Voltage: -20V, +20V
- Operating Temperature Range: -65°C ~ +150°C
- Power Dissipation: 100 Watts
- Channel Mode: Enhancement
- Configuration: Single
- Fall Time: 5 ns
- Rise Time: 8 ns
- Typical Turn-On Delay Time: 11.5 ns
- Mounting Style: Through Hole
- Package/Case: TO-220-3
IRF830 IRF 830 500V 4.5A 75W TO-220 N-Channel Power MOSFET 3 Pin IC Power Transistor Field Effect MOSFET IC Electronic Components
IRF840 IRFS840 N-channel 8A 500V Power MOSFET
IRFB4110 MOSFET- 100V 180A N-Channel HEXFET Power MOSFET TO-220
| Part Number | IRFB4110 |
| Mounting Type | Through Hole |
| Gate Charge Voltage | 10V |
| Number Of Pin | 3 Pins |
| Operating Temperature | -55 -175 Degree Celsius |
| Deals in | New |
IRFB4115 Mosfet Transistor, DIP, PNP
