Showing 91–108 of 128 results

IRF730 MOSFET N-Channel Power MOSFET

22.00
Features:-
  • Dynamic dV/dt rating
  • Repetitive avalanche rated
  • Fast switching
  • Ease of paralleling
  • Simple drive requirements
  • Number of Channels: 1
  • Transistor Polarity: N-Channel
  • Drain-Source Breakdown Voltage (Vds): 900V
  • Continuous Drain Current (Id):8A
  • Operating Temperature Range: -55 - 150°C

IRF740 – 400V 10A N-Channel Power MOSFET

35.00

Features/Specs:

  • Part No: IRF740
  • Dynamic dV/dt rating
  • N-Channel
  • Fast switching
  • Avalanche Current: 10A
  • Max Drain-Source Voltage: 400V
  • Max Gate-Source Voltage: + 30V
  • Max Continuous Drain Current, VGS @ 10 V, TC = 25 deg C: 10A

IRF830 – 500V 4.5A N-Channel Power MOSFET

28.00

Features/Specs:

  • Product Type: MOSFET
  • Transistor Polarity: N-Channel
  • Number of Channels: 1 Channel
  • Drain-Source Breakdown Voltage: 500V
  • Continuous Drain Current: 4.5A
  • Drain-Source Resistance: 1.5 Ohms
  • Gate-Source Voltage: -20V, +20V
  • Operating Temperature Range: -65°C ~ +150°C
  • Power Dissipation: 100 Watts
  • Channel Mode: Enhancement
  • Configuration: Single
  • Fall Time: 5 ns
  • Rise Time: 8 ns
  • Typical Turn-On Delay Time: 11.5 ns
  • Mounting Style: Through Hole
  • Package/Case: TO-220-3

IRF830 IRF 830 500V 4.5A 75W TO-220 N-Channel Power MOSFET 3 Pin IC Power Transistor Field Effect MOSFET IC Electronic Components

25.00
  • N-Channel Power MOSFET
  • Continuous Drain Current (ID): 4.5A
  • Gate threshold voltage (VGS-th) is 10V (limit = ±20V)
  • Drain to Source Breakdown Voltage: 500V
  • Drain Source Resistance (RDS) is 1.5 Ohms
  • Rise time and fall time is 16nS and 16n

IRF840 IRFS840 N-channel 8A 500V Power MOSFET

39.00
Dynamic dv/dt rating • Repetitive avalanche rated • Fast switching • Ease of paralleling • Simple drive requirements • Compliant to RoHS directive 2002/95/EC

IRFB4110 MOSFET- 100V 180A N-Channel HEXFET Power MOSFET TO-220

145.00
Part Number IRFB4110
Mounting Type Through Hole
Gate Charge Voltage 10V
Number Of Pin 3 Pins
Operating Temperature -55 -175 Degree Celsius
Deals in New
High efficiency synchronous rectification in SMPS • Uninterruptible power supply • High speed power switching • Hard switched and high frequency circuits

IRFB4115 Mosfet Transistor, DIP, PNP

157.00
  • Brand IR
    Part Number IRFB4115
    Transistor Type PNP
    Mounting Type DIP
    Current 25 DegreeC
    Voltage 150 V;,150
    Maximum Operating Frequency Circuits G
    Maximum Operating Temperature 150 DegreeC
    Maximum Power Dissipation W. Linear Derating Factor.
    Pin Count 3

IRFP 450N IR

80.00
Kynix Part #:KY56-IRFP450N
Manufacturer Part #:IRFP450N
Product Category:FETs - Single
Manufacturer:IR
Description:MOSFET N-CH 500V 14A TO-247AC
Package:TO-247-3
Quantity:1432 PCS
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Lead Time:3(168 Hours)

IRFP150N MOSFET – 100V 42A N-Channel Power MOSFET

68.00
  • Advanced process technology• Dynamic dv/dt rating • Fast switching • Fully avalanche rated

IRFP250N MOSFET – 200V 30A N-Channel Power MOSFET

85.00
• Advanced process technology • Dynamic dv/dt rating • Fast switching • Fully avalanche rated • Ease of paralleling • Simple drive requirements

IRFP260N MOSFET – 200V 50A N-Channel Power MOSFET

87.00
Features:- • Dynamic dV/dt rating • Repetitive avalanche rated • Fast switching • Ease of paralleling • Simple drive requirements

IRFP4568 MOSFET – 150V 171A N-Channel Power MOSFET

295.00
Features:- • Advanced Planar Technology • Ultra Low On-Resistance • Dynamic dv/dt Rating • Fast Switching • Repetitive Avalanche Allowed up to Tjmax • Lead-Free, RoHS Compliant

IRFZ44N MOSFET – 55V 49A N-Channel Power MOSFET

21.50
Features:- • Advanced Process Technology • Ultra Low On-Resistance • 175°C Operating Temperature • Fast Switching • Repetitive Avalanche Allowed up to Tjmax • Lead-Free, RoHS Compliant Detailed Specifications:-
Number of Channels 1 Channel
Transistor Polarity N-Channel
Drain-Source Breakdown Voltage (Vds) 55V
Continuous Drain Current (Id) 49A
Drain-Source Resistance (Rds On) 0.0175Ohms
Gate-Source Voltage (Vgs) 20V
Gate Charge (Qg) 63 nC
Operating Temperature Range -55 - 175°C
Power Dissipation (Pd) 94W

IRFZ48N MOSFET – 55V 64A N-Channel Power MOSFET

30.00
Advanced process technology • Ultra Low On-Resistance • Fully Avalanche Rated • 175 °C operating temperature • Fast switching

KBPC2510 25A 1000V Bridge Rectifier

27.00
High current capability High Efficiency Low Power Loss Low reverse leakage current Electrically isolated Metal case for Maximum Heat Dissipation High case dielectric strength Peak Reverse Voltage - 50V to 1000V Case to Terminal Isolation Voltage - 2500V Diffused Junction

KBPC3510 35A 1000V Bridge Rectifier

45.00
High current capability Surge overload rating: 400A peak High Efficiency Low Power Loss Low reverse leakage current Electrically isolated Metal case for Maximum Heat Dissipation High case dielectric strength Peak Reverse Voltage : 50V to 1000V Case to Terminal Isolation Voltage : 2500V Diffused Junction

KBPC5010 50A 1000V Bridge Rectifier

58.00
High current capability Surge overload ratings : 400 Amperes High Efficiency Low Power Loss Low reverse leakage current Electrically isolated Metal case for Maximum Heat Dissipation High case dielectric strength Peak Reverse voltage : 50V to 1000V Case to Terminal Isolation Voltage : 2500V Diffused Junction

LM393 Low Power Low Offset Voltage Dual Comparator

9.00
    1. Features:- • Wide Supply – Voltage Range: 2.0 V to 36 V – Single or Dual Supplies: ±1.0 V to ±18 V • Very Low Supply Current Drain (0.4 mA) — Independent of Supply Voltage • Low Input Biasing Current: 25 nA • Low Input Offset Current: ±5 nA • Maximum Offset voltage: ±3 mV • Input Common-Mode Voltage Range Includes Ground • Differential Input Voltage Range Equal to the Power Supply Voltage • Low Output Saturation Voltage: 250 mV at 4 mA • Output Voltage Compatible with TTL, DTL, ECL, MOS and CMOS logic systems