Showing 73–96 of 128 results

IC TOP253PN

73.00
Arduino Uno Rev3 Code: A000066 / Barcode: 7630049200050 Nunc per mollis pot enti amet imperdiet blandit dis eu sociosqu accumsan

ICs current sensor AC57581/CB-050U

349.00
  • Primary sampled current (Ip) of 50A
  • Sensitivity is 60mV/A
  • Current directionality is unidirectional
  • Automotive grade AEC Q-100 qualified
  • Ultra low power loss, 100µohm internal conductor resistance
  • Single supply operation from 3V to 5.5V
  • 120KHz typical bandwidth
  • 3µs output rise time in response to step input current
  • Output voltage proportional to AC or DC currents
  • Operating temperature range from -40°C to 85°C

ICs current sensor ACS758 brand new and Original ACS758LCB-100B-PFF-T linear Hall Effect Sensor 5-Pin CB PFF 100A Bidirectional

320.00
  • Primary sampled current (Ip) of ±50A
  • Sensitivity is 40mV/A
  • Current directionality is bidirectional
  • Automotive grade AEC Q-100 qualified
  • Ultra low power loss, 100µohm internal conductor resistance
  • Single supply operation from 3V to 5.5V
  • 120KHz typical bandwidth
  • 3µs output rise time in response to step input current
  • Output voltage proportional to AC or DC currents
  • Operating temperature range from -40°C to 85°C

Applications

Sensing & Instrumentation, Motor Drive & Control, Power Management, Automotive

ICs current sensor ACS758 brand new and Original ACS758LCB-100u-PFF-T linear Hall Effect Sensor 5-Pin CB PFF 100u Bidirectional

390.00
Allegro ACS758 family of current sensor ICs provides economical and precise solutions for AC or DC current sensing. Typical applications include motor control, load detection and management, power supply and DC-to-DC converter control, inverter control, and overcurrent fault detection. The device consists of a precision, low-offset linear Hall circuit with a copper conduction path located near the die. Applied current flowing through this copper conduction path generates a magnetic field which the Hall IC converts into a proportional voltage. Device accuracy is optimized through the close proximity of the magnetic signal to the Hall transducer. A precise, proportional output voltage is provided by the low-offset, chopper-stabilized BiCMOS Hall IC, which is programmed for accuracy at the factory. High-level immunity to current conductor dV/dt and stray electric fields, offered by Allegro proprietary integrated shield technology, guarantees low output voltage ripple and low offset drift in high-side, high-voltage applications. The output of the device has a positive slope (>VCC / 2) when an increasing current flows through the primary copper conduction path (from terminal 4 to terminal 5), which is the path used for current sampling. The internal resistance of this conductive path is 100 µΩ typical, providing low power loss. The thickness of the copper conductor allows survival of the device at high overcurrent conditions. The terminals of the conductive path are electrically isolated from the signal leads (pins 1 through 3). This allows the ACS758 family of sensor ICs to be used in applications requiring electrical isolation without the use of opto-isolators or other costly isolation techniques. The device is fully calibrated prior to shipment from the factory. The ACS758 family is lead (Pb) free. All leads are plated with 100% matte tin, and there is no Pb inside the package. The heavy gauge leadframe is made of oxygen-free copper.
  • Industry-leading noise performance through proprietary amplifier and filter design techniques
  • Integrated shield greatly reduces capacitive coupling from current conductor to die due to high dV/dt signals, and prevents offset drift in high-side, high-voltage applications
  • Total output error improvement through gain and offset trim over temperature
  • Small package size, with easy mounting capability
  • Monolithic Hall IC for high reliability
  • Ultralow power loss: 100 µΩ internal conductor resistance
  • Galvanic isolation allows use in economical, high-side current sensing in high-voltage systems
  • AEC-Q100 qualified
  • 3.0 to 5.5 V, single supply operation
  • 120 kHz typical bandwidth
  • 3 µs output rise time in response to step input current
  • Output voltage proportional to AC or DC currents
  • Factory-trimmed for accuracy
  • Extremely stable output offset voltage
  • Nearly zero magnetic hysteresis

ICs current sensor ACS758LCB-050B-PFF-T

320.00
  • Primary sampled current (Ip) of ±50A
  • Sensitivity is 40mV/A
  • Current directionality is bidirectional
  • Automotive grade AEC Q-100 qualified
  • Ultra low power loss, 100µohm internal conductor resistance
  • Single supply operation from 3V to 5.5V
  • 120KHz typical bandwidth
  • 3µs output rise time in response to step input current
  • Output voltage proportional to AC or DC currents
  • Operating temperature range from -40°C to 85°C

IGBT 100A 600V MIT/SKM100GB030 SKM100GB12V IGBT Modules SEMITRANS 2

2,799.00

SKM100GB12V

IGBT Modules SEMITRANS 2 (94x34x30)

Part Number 22892023
Product Status In production
Housing SEMITRANS 2 (94x34x30)
(LLxBBxHH) 94x34x30
Switches Half Bridge
VCES in V 1200
ICnom in A 100
Technology V-IGBT

IGBT 100A1200V SKM100GB12T4 SKM100GB12T4 IGBT Modules SEMITRANS 2

2,999.00

SKM100GB12T4

IGBT Modules SEMITRANS 2 (94x34x30)

Part Number 22892020
Product Status In production
Housing SEMITRANS 2 (94x34x30)
(LLxBBxHH) 94x34x30
Switches Half Bridge
VCES in V 1200
ICnom in A 100
Technology IGBT 4 Fast (Trench)
SEMIKRON SEMITRANS 2 (94x34x30)
SEMIKRON GB Half Bridge

IGBT 150A 600V MIT/SKM145GB066 SKM145GB066D IGBT Modules SEMITRANS 2

2,899.00

SKM145GB066D

IGBT Modules SEMITRANS 2 (94x34x30)

Part Number 22890045
Product Status In production
Housing SEMITRANS 2 (94x34x30)
(LLxBBxHH) 94x34x30
Switches Half Bridge
VCES in V 600
ICnom in A 150
Technology IGBT 3 (Trench)
Back to product overview
SEMIKRON SEMITRANS 2 (94x34x30)
SEMIKRON GB Half Bridge

IGBT 200A 600V MIT/SKM195GB066 SKM195GB066D IGBT Module, Half Bridge, 265 A, 1.45 V, 175 °C, Module

2,899.00
 

SKM195GB066D

IGBT Module, Half Bridge, 265 A, 1.45 V, 175 °C, Module

SEMIKRON SKM195GB066D

Image is for illustrative purposes only. Please refer to product description.

Manufacturer:SEMIKRON
Manufacturer Part No:SKM195GB066D
Order Code:2423691
Technical Datasheet: SKM195GB066D   Datasheet

Product details

Dual IGBT Modules

A range of SEMITOP® IGBT modules from Semikron incorporating two series-connected (half bridge) IGBT devices. The modules are available in a wide range of voltage and current ratings and are suitable for a variety of power switching applications such as AC inverter motor drives and Uninterruptible Power Supplies.

IGBT Modules, Semikron

Specifications

Brand

Semikron

Maximum Continuous Collector Current

265 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Package Type

SEMITRANS2

Configuration

Dual Half Bridge

Mounting Type

Panel Mount

Channel Type

N

Pin Count

7

Transistor Configuration

Series

Dimensions

94 x 34 x 30.5mm

Minimum Operating Temperature

-40 °C

Maximum Operating Temperature

+175 °C

IGBT 200A/1200V SKM200GB12E4 S

3,999.00

IGBT 25N120R FSC 25N120 – 25A 1200V IGBT Transistor

99.00

IGBT POWER MODULE SKM300GB125D

6,499.00

IR2153 IC – Self Oscillating Half Bridge Driver IC

96.50
  • Integrated 600V half-bridge gate driver
  • 15.6V Zener clamp on Vcc
  • True micropower start up
  • Tighter initial deadtime control
  • Low-temperature coefficient deadtime

IRF3205 MOSFET – 55V 110A N-Channel HEXFET Power MOSFET

42.00
Features:- • Advanced process technology • Ultra low on-resistance • Dynamic dv/dt rating • Fast switching • Fully avalanche rated  

IRF3415 MOSFET – 150V 43A N-Channel HEXFET Power MOSFET

75.00
• Advanced process technology • Ultra low on-resistance • Dynamic dv/dt rating • Fast switching • Fully avalanche rated

IRF3710 MOSFET 100V 57A N-Channel MOSFET Transistor

35.00
IRF3710 is anN-Channel Power MOSFET which utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area, this design enables the transistor for fast switching speeds and ruggedized device design. IRF3710 being extremely efficient and reliable device, therefore used in wide variety of applications. Even the TO-220 package is universally preferred for many commercial-industrial applications at power dissipation levels to Roughly 50 watts. The low thermal resistance and low package cost of the TO-220 bring about its acceptance across the industry.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts.

IRF4905PBF

59.00
Arduino Uno Rev3 Code: A000066 / Barcode: 7630049200050 Nunc per mollis pot enti amet imperdiet blandit dis eu sociosqu accumsan

IRF530N IC MOSFET

20.00
  • 1. Ultra Low On-Resistance : -rDS(ON)= 0.064Ω, VGS = 10V 2. Simulation Models (1) Temperature Compensated PSPICE and SABER Electrical Models (2) Spice and SABER Thermal Impedance Models 3. Peak Current vs Pulse Width Curve 4. UIS Rating Curve   Absolute Maximum Ratings 1. Drain to Source Voltage : VDSS = 100 V 2. Drain to Gate Voltage (RGS = 20kΩ): VDGR = 100 V 3. Gate to Source Voltage : VGS = ±20 V 4. Drain Current : ID = 22A 5. Power Dissipation: Pd = 85 W

IRF730 MOSFET N-Channel Power MOSFET

22.00
Features:-
  • Dynamic dV/dt rating
  • Repetitive avalanche rated
  • Fast switching
  • Ease of paralleling
  • Simple drive requirements
  • Number of Channels: 1
  • Transistor Polarity: N-Channel
  • Drain-Source Breakdown Voltage (Vds): 900V
  • Continuous Drain Current (Id):8A
  • Operating Temperature Range: -55 - 150°C

IRF740 – 400V 10A N-Channel Power MOSFET

35.00

Features/Specs:

  • Part No: IRF740
  • Dynamic dV/dt rating
  • N-Channel
  • Fast switching
  • Avalanche Current: 10A
  • Max Drain-Source Voltage: 400V
  • Max Gate-Source Voltage: + 30V
  • Max Continuous Drain Current, VGS @ 10 V, TC = 25 deg C: 10A

IRF830 – 500V 4.5A N-Channel Power MOSFET

28.00

Features/Specs:

  • Product Type: MOSFET
  • Transistor Polarity: N-Channel
  • Number of Channels: 1 Channel
  • Drain-Source Breakdown Voltage: 500V
  • Continuous Drain Current: 4.5A
  • Drain-Source Resistance: 1.5 Ohms
  • Gate-Source Voltage: -20V, +20V
  • Operating Temperature Range: -65°C ~ +150°C
  • Power Dissipation: 100 Watts
  • Channel Mode: Enhancement
  • Configuration: Single
  • Fall Time: 5 ns
  • Rise Time: 8 ns
  • Typical Turn-On Delay Time: 11.5 ns
  • Mounting Style: Through Hole
  • Package/Case: TO-220-3

IRF830 IRF 830 500V 4.5A 75W TO-220 N-Channel Power MOSFET 3 Pin IC Power Transistor Field Effect MOSFET IC Electronic Components

25.00
  • N-Channel Power MOSFET
  • Continuous Drain Current (ID): 4.5A
  • Gate threshold voltage (VGS-th) is 10V (limit = ±20V)
  • Drain to Source Breakdown Voltage: 500V
  • Drain Source Resistance (RDS) is 1.5 Ohms
  • Rise time and fall time is 16nS and 16n

IRF840 IRFS840 N-channel 8A 500V Power MOSFET

39.00
Dynamic dv/dt rating • Repetitive avalanche rated • Fast switching • Ease of paralleling • Simple drive requirements • Compliant to RoHS directive 2002/95/EC

IRFB4110 MOSFET- 100V 180A N-Channel HEXFET Power MOSFET TO-220

145.00
Part Number IRFB4110
Mounting Type Through Hole
Gate Charge Voltage 10V
Number Of Pin 3 Pins
Operating Temperature -55 -175 Degree Celsius
Deals in New
High efficiency synchronous rectification in SMPS • Uninterruptible power supply • High speed power switching • Hard switched and high frequency circuits