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IC's
IRF3205 MOSFET – 55V 110A N-Channel HEXFET Power MOSFET
IRF3415 MOSFET – 150V 43A N-Channel HEXFET Power MOSFET
IRF3710 MOSFET 100V 57A N-Channel MOSFET Transistor
IRF3710 is anN-Channel Power MOSFET which utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area, this design enables the transistor for fast switching speeds and ruggedized device design. IRF3710 being extremely efficient and reliable device, therefore used in wide variety of applications. Even the TO-220 package is universally preferred for many commercial-industrial applications at power dissipation levels to Roughly 50 watts. The low thermal resistance and low package cost of the TO-220 bring about its acceptance across the industry.
IRF4905PBF
IRF530N IC MOSFET
- 1. Ultra Low On-Resistance : -rDS(ON)= 0.064Ω, VGS = 10V 2. Simulation Models (1) Temperature Compensated PSPICE and SABER Electrical Models (2) Spice and SABER Thermal Impedance Models 3. Peak Current vs Pulse Width Curve 4. UIS Rating Curve Absolute Maximum Ratings 1. Drain to Source Voltage : VDSS = 100 V 2. Drain to Gate Voltage (RGS = 20kΩ): VDGR = 100 V 3. Gate to Source Voltage : VGS = ±20 V 4. Drain Current : ID = 22A 5. Power Dissipation: Pd = 85 W
IRF730 MOSFET N-Channel Power MOSFET
IRF740 – 400V 10A N-Channel Power MOSFET
IRF830 – 500V 4.5A N-Channel Power MOSFET
Features/Specs:
- Product Type: MOSFET
- Transistor Polarity: N-Channel
- Number of Channels: 1 Channel
- Drain-Source Breakdown Voltage: 500V
- Continuous Drain Current: 4.5A
- Drain-Source Resistance: 1.5 Ohms
- Gate-Source Voltage: -20V, +20V
- Operating Temperature Range: -65°C ~ +150°C
- Power Dissipation: 100 Watts
- Channel Mode: Enhancement
- Configuration: Single
- Fall Time: 5 ns
- Rise Time: 8 ns
- Typical Turn-On Delay Time: 11.5 ns
- Mounting Style: Through Hole
- Package/Case: TO-220-3
IRF830 IRF 830 500V 4.5A 75W TO-220 N-Channel Power MOSFET 3 Pin IC Power Transistor Field Effect MOSFET IC Electronic Components
IRF840 IRFS840 N-channel 8A 500V Power MOSFET
IRFB4110 MOSFET- 100V 180A N-Channel HEXFET Power MOSFET TO-220
| Part Number | IRFB4110 |
| Mounting Type | Through Hole |
| Gate Charge Voltage | 10V |
| Number Of Pin | 3 Pins |
| Operating Temperature | -55 -175 Degree Celsius |
| Deals in | New |
IRFB4115 Mosfet Transistor, DIP, PNP
IRFP 450N IR
IRFP250N MOSFET – 200V 30A N-Channel Power MOSFET
IRFP260N MOSFET – 200V 50A N-Channel Power MOSFET
IRFP4568 MOSFET – 150V 171A N-Channel Power MOSFET
IRFZ44N MOSFET – 55V 49A N-Channel Power MOSFET
Features:-
• Advanced Process Technology
• Ultra Low On-Resistance
• 175°C Operating Temperature
• Fast Switching
• Repetitive Avalanche Allowed up to Tjmax
• Lead-Free, RoHS Compliant
Detailed Specifications:-
| Number of Channels | 1 Channel |
| Transistor Polarity | N-Channel |
| Drain-Source Breakdown Voltage (Vds) | 55V |
| Continuous Drain Current (Id) | 49A |
| Drain-Source Resistance (Rds On) | 0.0175Ohms |
| Gate-Source Voltage (Vgs) | 20V |
| Gate Charge (Qg) | 63 nC |
| Operating Temperature Range | -55 - 175°C |
| Power Dissipation (Pd) | 94W |
IRFZ48N MOSFET – 55V 64A N-Channel Power MOSFET
KBPC2510 25A 1000V Bridge Rectifier
KBPC3510 35A 1000V Bridge Rectifier
High current capability
Surge overload rating: 400A peak
High Efficiency
Low Power Loss
Low reverse leakage current
Electrically isolated Metal case for Maximum Heat Dissipation
High case dielectric strength
Peak Reverse Voltage : 50V to 1000V
Case to Terminal Isolation Voltage : 2500V
Diffused Junction
KBPC5010 50A 1000V Bridge Rectifier
High current capability
Surge overload ratings : 400 Amperes
High Efficiency
Low Power Loss
Low reverse leakage current
Electrically isolated Metal case for Maximum Heat Dissipation
High case dielectric strength
Peak Reverse voltage : 50V to 1000V
Case to Terminal Isolation Voltage : 2500V
Diffused Junction
LM393 Low Power Low Offset Voltage Dual Comparator
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- Features:- • Wide Supply – Voltage Range: 2.0 V to 36 V – Single or Dual Supplies: ±1.0 V to ±18 V • Very Low Supply Current Drain (0.4 mA) — Independent of Supply Voltage • Low Input Biasing Current: 25 nA • Low Input Offset Current: ±5 nA • Maximum Offset voltage: ±3 mV • Input Common-Mode Voltage Range Includes Ground • Differential Input Voltage Range Equal to the Power Supply Voltage • Low Output Saturation Voltage: 250 mV at 4 mA • Output Voltage Compatible with TTL, DTL, ECL, MOS and CMOS logic systems
LM7812 7812 Positive Voltage Regulator IC 12V/1A, Multicolour -10 Pieces
