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• N-Channel Power MOSFET
• Continuous Drain Current (I_D): 4.5A
• Gate threshold voltage (V_GS-th) is 10V (limit = ±20V)
• Drain to Source Breakdown Voltage: 500V
• Drain Source Resistance (R_DS) is 1.5 Ohms
• Rise time and fall time is 16nS and 16n

Dynamic dv/dt rating • Repetitive avalanche rated • Fast switching • Ease of paralleling • Simple drive requirements • Compliant to RoHS directive 2002/95/EC

Arduino Uno Rev3 Code: A000066 / Barcode: 7630049200050 Nunc per mollis pot enti amet imperdiet blandit dis eu sociosqu accumsan

MCT2E Specifications Specification:

• Package/Case  : DIP-6

• Mounting Type :  TH

• CTR  :  60% at IF=10mA ,VCE=10V

• Operating Temperature Range (°C)  :  -55 to 100

• Maximum Collector Emitter Voltage :  70 V

• Maximum Collector Current  :  50 mA

• Isolation Voltage  :  5300 Vrms

• Vf - Forward Voltage  :  1.25 V

• Vr - Reverse Voltage  :  6 V

• Pd - Power Dissipation  :  200 mW

• Number of Channels  :  1 Channel