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IC LM339 ST
• Single Supply Operation: 3.0 V to 36 V
• Split Supply Operation: ±1.5 V to ±18 V
• Low Input Bias Current: 25 nA (Typ)
• Low Input Offset Current: ±5.0 nA (Typ)
• Low Input Offset Voltage
• Input Common Mode Voltage Range to GND
• Low Output Saturation Voltage: 130 mV (Typ) @ 4.0 mA
• TTL and CMOS Compatible
• ESD Clamps on the Inputs Increase Reliability without Affecting
Device Operation
• NCV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
IC MOSFET 105N3L ST
IC MOSFET DH60NF06 WHXD(60A60V)
IC MOSFET DH90NF03 WXHD(90A30V)
IC MOSFET DH90NF03 WXHD(90A30V)
IC MOSFET IRF540N
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Features:
- Drain to source voltage Vds is 100V
- Gate to source voltage is ±20V
- On Resistance Rds(on) of 44mohm at Vgs of 10V
- Power dissipation Pd of 130W at 25°C
- Continuous drain current Id of 33A at Vgs 10V and 25°C
- Operating junction temperature range from -55°C to 175°C
- Applications: Power Management, Industrial, Portable Devices, Consumer Electronics.
IC MOSFET IRF9540 IR
IC MOSFET IRFB4229
IC MOSFET IRFB4310
IC MOSFET IRFB4332
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- Industry standard through-hole power package
- High-current rating
- Product qualification according to JEDEC standard
- Silicon optimized for applications switching below <100 kHz
- Softer body-diode compared to previous silicon generation
- Wide portfolio available
Benefits
- Standard pinout allows for drop in replacement
- High-current carrying capability package
- Industry standard qualification level
- High performance in low frequency applications
- Increased power density
- Provides designers flexibility in selecting the most optimal device for their application
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IC MOSFET IRFP4468
