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STP80NF10 Power MOSFET
₹55.00
Product Specification
| Part Number | P80nf10 |
| Maximum Drain Source Resistance | 0.015 Ohm. |
| Maximum Operating Temperature | + 175 C |
| Maximum Gate Source Voltage | 100 v |
| Maximum Continuous Drain Current | 80 A |
| Mounting Type | Through Hole |
| Part Number |
P80nf10
|
| Maximum Drain Source Resistance |
0.015 Ohm.
|
| Maximum Operating Temperature |
+ 175 C
|
| Maximum Gate Source Voltage |
100 v
|
| Maximum Continuous Drain Current |
80 A
|
Features of STP80NF10 MOSFET:
- Exceptional dv/dt capability
- 100% Avalanche tested
- Application oriented characterization
- ID Drain current (continuous) at TC = 25 DegreeC 80A
- ID Drain current (continuous) at TC = 100 DegreeC 80A
- PTOT Total dissipation at TC = 25 DegreeC 300W
- Derating factor 2W/ DegreeC
- dv/dt Peak diode recovery voltage slope 7V/ns
- EAS Single pulse avalanche energy 350mJ
- Tstg Storage temperature
- Rthj-case Thermal resistance junction-case max 0.5 DegreeC/W
- Rthj-amb Thermal resistance junction-ambient max 62.5 DegreeC/W
- Tl Maximum lead temperature for soldering purpose 300 DegreeC
Additional information
| Specification | Blue, Brown, Yellow |
|---|
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