Showing 73–84 of 113 results

IRF3205 MOSFET – 55V 110A N-Channel HEXFET Power MOSFET

42.00
Features:- • Advanced process technology • Ultra low on-resistance • Dynamic dv/dt rating • Fast switching • Fully avalanche rated  

IRF3415 MOSFET – 150V 43A N-Channel HEXFET Power MOSFET

75.00
• Advanced process technology • Ultra low on-resistance • Dynamic dv/dt rating • Fast switching • Fully avalanche rated

IRF3710 MOSFET 100V 57A N-Channel MOSFET Transistor

35.00
IRF3710 is anN-Channel Power MOSFET which utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area, this design enables the transistor for fast switching speeds and ruggedized device design. IRF3710 being extremely efficient and reliable device, therefore used in wide variety of applications. Even the TO-220 package is universally preferred for many commercial-industrial applications at power dissipation levels to Roughly 50 watts. The low thermal resistance and low package cost of the TO-220 bring about its acceptance across the industry.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts.

IRF4905PBF

59.00
Arduino Uno Rev3 Code: A000066 / Barcode: 7630049200050 Nunc per mollis pot enti amet imperdiet blandit dis eu sociosqu accumsan

IRF530N IC MOSFET

20.00
  • 1. Ultra Low On-Resistance : -rDS(ON)= 0.064Ω, VGS = 10V 2. Simulation Models (1) Temperature Compensated PSPICE and SABER Electrical Models (2) Spice and SABER Thermal Impedance Models 3. Peak Current vs Pulse Width Curve 4. UIS Rating Curve   Absolute Maximum Ratings 1. Drain to Source Voltage : VDSS = 100 V 2. Drain to Gate Voltage (RGS = 20kΩ): VDGR = 100 V 3. Gate to Source Voltage : VGS = ±20 V 4. Drain Current : ID = 22A 5. Power Dissipation: Pd = 85 W

IRF730 MOSFET N-Channel Power MOSFET

22.00
Features:-
  • Dynamic dV/dt rating
  • Repetitive avalanche rated
  • Fast switching
  • Ease of paralleling
  • Simple drive requirements
  • Number of Channels: 1
  • Transistor Polarity: N-Channel
  • Drain-Source Breakdown Voltage (Vds): 900V
  • Continuous Drain Current (Id):8A
  • Operating Temperature Range: -55 - 150°C

IRF740 – 400V 10A N-Channel Power MOSFET

35.00

Features/Specs:

  • Part No: IRF740
  • Dynamic dV/dt rating
  • N-Channel
  • Fast switching
  • Avalanche Current: 10A
  • Max Drain-Source Voltage: 400V
  • Max Gate-Source Voltage: + 30V
  • Max Continuous Drain Current, VGS @ 10 V, TC = 25 deg C: 10A

IRF830 – 500V 4.5A N-Channel Power MOSFET

28.00

Features/Specs:

  • Product Type: MOSFET
  • Transistor Polarity: N-Channel
  • Number of Channels: 1 Channel
  • Drain-Source Breakdown Voltage: 500V
  • Continuous Drain Current: 4.5A
  • Drain-Source Resistance: 1.5 Ohms
  • Gate-Source Voltage: -20V, +20V
  • Operating Temperature Range: -65°C ~ +150°C
  • Power Dissipation: 100 Watts
  • Channel Mode: Enhancement
  • Configuration: Single
  • Fall Time: 5 ns
  • Rise Time: 8 ns
  • Typical Turn-On Delay Time: 11.5 ns
  • Mounting Style: Through Hole
  • Package/Case: TO-220-3

IRF830 IRF 830 500V 4.5A 75W TO-220 N-Channel Power MOSFET 3 Pin IC Power Transistor Field Effect MOSFET IC Electronic Components

25.00
  • N-Channel Power MOSFET
  • Continuous Drain Current (ID): 4.5A
  • Gate threshold voltage (VGS-th) is 10V (limit = ±20V)
  • Drain to Source Breakdown Voltage: 500V
  • Drain Source Resistance (RDS) is 1.5 Ohms
  • Rise time and fall time is 16nS and 16n

IRF840 IRFS840 N-channel 8A 500V Power MOSFET

39.00
Dynamic dv/dt rating • Repetitive avalanche rated • Fast switching • Ease of paralleling • Simple drive requirements • Compliant to RoHS directive 2002/95/EC

IRFB4110 MOSFET- 100V 180A N-Channel HEXFET Power MOSFET TO-220

145.00
Part Number IRFB4110
Mounting Type Through Hole
Gate Charge Voltage 10V
Number Of Pin 3 Pins
Operating Temperature -55 -175 Degree Celsius
Deals in New
High efficiency synchronous rectification in SMPS • Uninterruptible power supply • High speed power switching • Hard switched and high frequency circuits

IRFB4115 Mosfet Transistor, DIP, PNP

157.00
  • Brand IR
    Part Number IRFB4115
    Transistor Type PNP
    Mounting Type DIP
    Current 25 DegreeC
    Voltage 150 V;,150
    Maximum Operating Frequency Circuits G
    Maximum Operating Temperature 150 DegreeC
    Maximum Power Dissipation W. Linear Derating Factor.
    Pin Count 3