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Part Number | P80nf10 |
Maximum Drain Source Resistance | 0.015 Ohm. |
Maximum Operating Temperature | + 175 C |
Maximum Gate Source Voltage | 100 v |
Maximum Continuous Drain Current | 80 A |
Mounting Type | Through Hole |
Part Number |
P80nf10
|
Maximum Drain Source Resistance |
0.015 Ohm.
|
Maximum Operating Temperature |
+ 175 C
|
Maximum Gate Source Voltage |
100 v
|
Maximum Continuous Drain Current |
80 A
|
Features of STP80NF10 MOSFET:
Specification | Blue, Brown, Yellow |
---|
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Parameter | Specification |
Supply Voltage (VCC) | 7 V |
Input Voltage (VI) | 7 V |
Operating free-air temperature range | 0°C to +70°C |
Storage temperature range | –65°C to +150°C |
IGBT Module, Half Bridge, 265 A, 1.45 V, 175 °C, Module
Image is for illustrative purposes only. Please refer to product description.
Product details
A range of SEMITOP® IGBT modules from Semikron incorporating two series-connected (half bridge) IGBT devices. The modules are available in a wide range of voltage and current ratings and are suitable for a variety of power switching applications such as AC inverter motor drives and Uninterruptible Power Supplies.
Specifications
Brand
Semikron
Maximum Continuous Collector Current
265 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Package Type
SEMITRANS2
Configuration
Dual Half Bridge
Mounting Type
Panel Mount
Channel Type
N
Pin Count
7
Transistor Configuration
Series
Dimensions
94 x 34 x 30.5mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+175 °C
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