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IRF840 IRFS840 N-channel 8A 500V Power MOSFET

₹39.00
Dynamic dv/dt rating • Repetitive avalanche rated • Fast switching • Ease of paralleling • Simple drive requirements • Compliant to RoHS directive 2002/95/EC
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IRFB4110 MOSFET- 100V 180A N-Channel HEXFET Power MOSFET TO-220

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₹145.00
Part Number IRFB4110
Mounting Type Through Hole
Gate Charge Voltage 10V
Number Of Pin 3 Pins
Operating Temperature -55 -175 Degree Celsius
Deals in New
High efficiency synchronous rectification in SMPS • Uninterruptible power supply • High speed power switching • Hard switched and high frequency circuits
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IRFB4115 Mosfet Transistor, DIP, PNP

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₹157.00
  • Brand IR
    Part Number IRFB4115
    Transistor Type PNP
    Mounting Type DIP
    Current 25 DegreeC
    Voltage 150 V;,150
    Maximum Operating Frequency Circuits G
    Maximum Operating Temperature 150 DegreeC
    Maximum Power Dissipation W. Linear Derating Factor.
    Pin Count 3
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IRFP 450N IR

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₹80.00
Kynix Part #:KY56-IRFP450N
Manufacturer Part #:IRFP450N
Product Category:FETs - Single
Manufacturer:IR
Description:MOSFET N-CH 500V 14A TO-247AC
Package:TO-247-3
Quantity:1432 PCS
Lead Free Status / RoHS Status:Lead free / RoHS Compliant
Lead Time:3(168 Hours)
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IRFP150N MOSFET – 100V 42A N-Channel Power MOSFET

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₹68.00
  • Advanced process technology• Dynamic dv/dt rating • Fast switching • Fully avalanche rated
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IRFP250N MOSFET – 200V 30A N-Channel Power MOSFET

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₹85.00
• Advanced process technology • Dynamic dv/dt rating • Fast switching • Fully avalanche rated • Ease of paralleling • Simple drive requirements
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IRFP260N MOSFET – 200V 50A N-Channel Power MOSFET

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₹87.00
Features:- • Dynamic dV/dt rating • Repetitive avalanche rated • Fast switching • Ease of paralleling • Simple drive requirements
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IRFP4568 MOSFET – 150V 171A N-Channel Power MOSFET

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₹295.00
Features:- • Advanced Planar Technology • Ultra Low On-Resistance • Dynamic dv/dt Rating • Fast Switching • Repetitive Avalanche Allowed up to Tjmax • Lead-Free, RoHS Compliant
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IRFZ44N MOSFET – 55V 49A N-Channel Power MOSFET

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₹21.50
Features:- • Advanced Process Technology • Ultra Low On-Resistance • 175°C Operating Temperature • Fast Switching • Repetitive Avalanche Allowed up to Tjmax • Lead-Free, RoHS Compliant Detailed Specifications:-
Number of Channels 1 Channel
Transistor Polarity N-Channel
Drain-Source Breakdown Voltage (Vds) 55V
Continuous Drain Current (Id) 49A
Drain-Source Resistance (Rds On) 0.0175Ohms
Gate-Source Voltage (Vgs) 20V
Gate Charge (Qg) 63 nC
Operating Temperature Range -55 - 175°C
Power Dissipation (Pd) 94W
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