IRF3710 is anN-Channel Power MOSFET which utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area, this design enables the transistor for fast switching speeds and ruggedized device design. IRF3710 being extremely efficient and reliable device, therefore used in wide variety of applications. Even the TO-220 package is universally preferred for many commercial-industrial applications at power dissipation levels to Roughly 50 watts. The low thermal resistance and low package cost of the TO-220 bring about its acceptance across the industry.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts.
1. Ultra Low On-Resistance : -rDS(ON)= 0.064Ω, VGS = 10V
2. Simulation Models
(1) Temperature Compensated PSPICE and SABER Electrical Models
(2) Spice and SABER Thermal Impedance Models
3. Peak Current vs Pulse Width Curve
4. UIS Rating Curve
Absolute Maximum Ratings
1. Drain to Source Voltage : VDSS = 100 V
2. Drain to Gate Voltage (RGS = 20kΩ): VDGR = 100 V
3. Gate to Source Voltage : VGS = ±20 V
4. Drain Current : ID = 22A
5. Power Dissipation: Pd = 85 W
High efficiency synchronous rectification in SMPS
• Uninterruptible power supply
• High speed power switching
• Hard switched and high frequency circuits