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INVERTER CONTROL CARD, FOR EXIDE ,V GUARD,AMARON, WHIRLPOOL,KEVIN
IR Sensor Module
- Features of IR Sensor Module:-
- When the module detects obstacles in front of the signal, the circuit board green indicator light level, while the OUT port continuous output low-level signals, the module detects a distance of 2 ~ 10cm, detection angle 35 °, the detection distance can be potential adjustment with adjustment potentiometer clockwise, the increase in detection distance; counterclockwise adjustment potentiometer, the detection distance decreased.
- the sensor active infrared reflection detection, target reflectivity and shape of the detection distance of the key. The black minimum detection range, white maximum; small area object distance is small, a large area from the large.
- The sensor module output port OUT can be directly connected with the microcontroller IO port can also be driven directly to a 5V relay; Connection: VCC-VCC; GND-GND; OUT-IO.
- The comparator using LM393, stable.
- 3-5V DC power supply module can be used. When the power is turned on, the red power LED is lit.
- With the screw holes of 3mm, easy to install.
- Board size: 3.1CM * 1.5CM.
- Each module in the delivery has threshold comparator voltage adjustable via potentiometer, special circumstances, please do not adjust the potentiometer.
IR2153 IC – Self Oscillating Half Bridge Driver IC
IRF3205 MOSFET – 55V 110A N-Channel HEXFET Power MOSFET
IRF3415 MOSFET – 150V 43A N-Channel HEXFET Power MOSFET
IRF3710 MOSFET 100V 57A N-Channel MOSFET Transistor
IRF3710 is anN-Channel Power MOSFET which utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area, this design enables the transistor for fast switching speeds and ruggedized device design. IRF3710 being extremely efficient and reliable device, therefore used in wide variety of applications. Even the TO-220 package is universally preferred for many commercial-industrial applications at power dissipation levels to Roughly 50 watts. The low thermal resistance and low package cost of the TO-220 bring about its acceptance across the industry.
IRF4905PBF
IRF530N IC MOSFET
- 1. Ultra Low On-Resistance : -rDS(ON)= 0.064Ω, VGS = 10V2. Simulation Models (1) Temperature Compensated PSPICE and SABER Electrical Models (2) Spice and SABER Thermal Impedance Models3. Peak Current vs Pulse Width Curve4. UIS Rating Curve Absolute Maximum Ratings1. Drain to Source Voltage : VDSS = 100 V2. Drain to Gate Voltage (RGS = 20kΩ): VDGR = 100 V3. Gate to Source Voltage : VGS = ±20 V4. Drain Current : ID = 22A5. Power Dissipation: Pd = 85 W
IRF730 MOSFET N-Channel Power MOSFET
