Showing 109–117 of 128 results

LM7812 7812 Positive Voltage Regulator IC 12V/1A, Multicolour -10 Pieces

99.00
Arduino Uno Rev3 Code: A000066 / Barcode: 7630049200050 Nunc per mollis pot enti amet imperdiet blandit dis eu sociosqu accumsan

M57962L 12 pin hybrid IC for driving IGBT modules

499.00

MCT2E Optocoupler/Phototransistor IC

12.00
MCT2E Specifications Specification:
  • Package/Case  : DIP-6
  • Mounting Type :  TH
  • CTR  :  60% at IF=10mA ,VCE=10V
  • Operating Temperature Range (°C)  :  -55 to 100
  • Maximum Collector Emitter Voltage :  70 V
  • Maximum Collector Current  :  50 mA
  • Isolation Voltage  :  5300 Vrms
  • Vf - Forward Voltage  :  1.25 V
  • Vr - Reverse Voltage  :  6 V
  • Pd - Power Dissipation  :  200 mW
  • Number of Channels  :  1 Channel

MOC3021 DIP FSC

17.00
Excellent IFT stability—IR emitting diode has low degradation • High isolation voltage—minimum 5300 VAC RMS • Underwriters Laboratory (UL) recognized—File #E90700 • Peak blocking voltage – 250V-MOC301XM – 400V-MOC302XM • VDE recognized (File #94766) – Ordering option V (e.g. MOC3023VM) APPLICATIONS • Industrial controls • Solenoid/valve controls • Traffic lights • Static AC power switch • Vending machines • Incandescent lamp dimmers • Solid state relay • Motor control • Lamp ballasts

MOC3021 IC – Optocoupler Traic Driver IC

14.00
Features:- • Excellent IFT stability—IR emitting diode has low degradation • High isolation voltage—minimum 5300 VAC RMS • Underwriters Laboratory (UL) recognized—File #E90700 • Peak blocking voltage: 400V-MOC3021 • VDE recognized (File #94766) Applications:- Industrial, Motor Drive & Control, Consumer Electronics Specification:-
Symbol Parameter Value Unit
IF Forward current 60 mA
PD Power dissipation 100 mW
VR Reverse Voltage 3 V
Tstg Storage temperature range -40 to +150 °C
TOPR Operating Temperature -40 to +85 °C
TSOL Lead Solder Temperature 260 for 10 sec °C
ITSM Peak Repetitive Surge Current (PW = 1 ms, 120 pps) 1 A
VDRM Off-State Output Terminal Voltage 250 V
VISO Isolation Surge Voltage 7500 Vac(pk)

MOC3041 IC – Zero-Cross Optoisolator Triac Driver IC

19.99
Features:- • Simplifies Logic Control of 115 Vac Power • Zero Voltage Crossing • dv/dt of 2000 V/µs Typical, 1000 V/µs Guara Applications:- • Solenoid/Valve Controls • Temperature Controls • Lighting Controls • E.M. Contactors • Static Power Switches • AC Motor Starters • AC Motor Drives • Solid State R Specification:-
Symbol Parameter Value Unit
IF Forward current 60 mA
PD Power dissipation 120 mW
VR Reverse Voltage 6 V
Tstg Storage temperature range -40 to +150 °C
TOPR Operating Temperature -40 to +85 °C
TSOL Lead Solder Temperature 260 for 10 sec °C
ITSM Peak Repetitive Surge Current (PW = 1 ms, 120 pps) 1 A
VDRM Off-State Output Terminal Voltage 400 V
VISO Isolation Surge Voltage 7500 Vac(pk)

MOC3041 IC – Zero-Cross Optoisolator Triac Driver IC

19.00
Features:- • Simplifies Logic Control of 115 Vac Power • Zero Voltage Crossing • dv/dt of 2000 V/µs Typical, 1000 V/µs Guara Applications:- • Solenoid/Valve Controls • Temperature Controls • Lighting Controls • E.M. Contactors • Static Power Switches • AC Motor Starters • AC Motor Drives • Solid State R Specification:-
Symbol Parameter Value Unit
IF Forward current 60 mA
PD Power dissipation 120 mW
VR Reverse Voltage 6 V
Tstg Storage temperature range -40 to +150 °C
TOPR Operating Temperature -40 to +85 °C
TSOL Lead Solder Temperature 260 for 10 sec °C
ITSM Peak Repetitive Surge Current (PW = 1 ms, 120 pps) 1 A
VDRM Off-State Output Terminal Voltage 400 V
VISO Isolation Surge Voltage 7500 Vac(pk)

Naina Semiconductor Thyristor Module NTT106N160, 1.6KV,106A

900.00

P80nf10 Mosfet transistor

49.99
  • Type Designator: STP80NF10
  • Marking Code: P80NF10
  • Type of Transistor: MOSFET
  • Type of Control Channel: N -Channel
  • Maximum Power Dissipation (Pd): 300 W
  • Maximum Drain-Source Voltage |Vds|: 100 V
  • Maximum Gate-Source Voltage |Vgs|: 20 V
  • Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
  • Maximum Drain Current |Id|: 80 A
  • Maximum Junction Temperature (Tj): 175 °C
  • Total Gate Charge (Qg): 135 nC
  • Rise Time (tr): 80 nS
  • Drain-Source Capacitance (Cd): 700 pF
  • Maximum Drain-Source On-State Resistance (Rds): 0.015 Ohm