Showing 82–90 of 126 results

IGBT POWER MODULE SKM300GB125D

6,499.00

IR2153 IC – Self Oscillating Half Bridge Driver IC

96.50
  • Integrated 600V half-bridge gate driver
  • 15.6V Zener clamp on Vcc
  • True micropower start up
  • Tighter initial deadtime control
  • Low-temperature coefficient deadtime

IRF3205 MOSFET – 55V 110A N-Channel HEXFET Power MOSFET

42.00
Features:- • Advanced process technology • Ultra low on-resistance • Dynamic dv/dt rating • Fast switching • Fully avalanche rated  

IRF3415 MOSFET – 150V 43A N-Channel HEXFET Power MOSFET

75.00
• Advanced process technology • Ultra low on-resistance • Dynamic dv/dt rating • Fast switching • Fully avalanche rated

IRF3710 MOSFET 100V 57A N-Channel MOSFET Transistor

35.00
IRF3710 is anN-Channel Power MOSFET which utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area, this design enables the transistor for fast switching speeds and ruggedized device design. IRF3710 being extremely efficient and reliable device, therefore used in wide variety of applications. Even the TO-220 package is universally preferred for many commercial-industrial applications at power dissipation levels to Roughly 50 watts. The low thermal resistance and low package cost of the TO-220 bring about its acceptance across the industry.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts.

IRF4905PBF

59.00
Arduino Uno Rev3 Code: A000066 / Barcode: 7630049200050 Nunc per mollis pot enti amet imperdiet blandit dis eu sociosqu accumsan

IRF530N IC MOSFET

20.00
  • 1. Ultra Low On-Resistance : -rDS(ON)= 0.064Ω, VGS = 10V 2. Simulation Models (1) Temperature Compensated PSPICE and SABER Electrical Models (2) Spice and SABER Thermal Impedance Models 3. Peak Current vs Pulse Width Curve 4. UIS Rating Curve   Absolute Maximum Ratings 1. Drain to Source Voltage : VDSS = 100 V 2. Drain to Gate Voltage (RGS = 20kΩ): VDGR = 100 V 3. Gate to Source Voltage : VGS = ±20 V 4. Drain Current : ID = 22A 5. Power Dissipation: Pd = 85 W

IRF730 MOSFET N-Channel Power MOSFET

22.00
Features:-
  • Dynamic dV/dt rating
  • Repetitive avalanche rated
  • Fast switching
  • Ease of paralleling
  • Simple drive requirements
  • Number of Channels: 1
  • Transistor Polarity: N-Channel
  • Drain-Source Breakdown Voltage (Vds): 900V
  • Continuous Drain Current (Id):8A
  • Operating Temperature Range: -55 - 150°C

IRF740 – 400V 10A N-Channel Power MOSFET

35.00

Features/Specs:

  • Part No: IRF740
  • Dynamic dV/dt rating
  • N-Channel
  • Fast switching
  • Avalanche Current: 10A
  • Max Drain-Source Voltage: 400V
  • Max Gate-Source Voltage: + 30V
  • Max Continuous Drain Current, VGS @ 10 V, TC = 25 deg C: 10A