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IC's
IRF3415 MOSFET – 150V 43A N-Channel HEXFET Power MOSFET
IRF3710 MOSFET 100V 57A N-Channel MOSFET Transistor
IRF3710 is anN-Channel Power MOSFET which utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area, this design enables the transistor for fast switching speeds and ruggedized device design. IRF3710 being extremely efficient and reliable device, therefore used in wide variety of applications. Even the TO-220 package is universally preferred for many commercial-industrial applications at power dissipation levels to Roughly 50 watts. The low thermal resistance and low package cost of the TO-220 bring about its acceptance across the industry.
IRF4905PBF
IRF530N IC MOSFET
- 1. Ultra Low On-Resistance : -rDS(ON)= 0.064Ω, VGS = 10V 2. Simulation Models (1) Temperature Compensated PSPICE and SABER Electrical Models (2) Spice and SABER Thermal Impedance Models 3. Peak Current vs Pulse Width Curve 4. UIS Rating Curve Absolute Maximum Ratings 1. Drain to Source Voltage : VDSS = 100 V 2. Drain to Gate Voltage (RGS = 20kΩ): VDGR = 100 V 3. Gate to Source Voltage : VGS = ±20 V 4. Drain Current : ID = 22A 5. Power Dissipation: Pd = 85 W
IRF730 MOSFET N-Channel Power MOSFET
IRF740 – 400V 10A N-Channel Power MOSFET
IRF830 – 500V 4.5A N-Channel Power MOSFET
Features/Specs:
- Product Type: MOSFET
- Transistor Polarity: N-Channel
- Number of Channels: 1 Channel
- Drain-Source Breakdown Voltage: 500V
- Continuous Drain Current: 4.5A
- Drain-Source Resistance: 1.5 Ohms
- Gate-Source Voltage: -20V, +20V
- Operating Temperature Range: -65°C ~ +150°C
- Power Dissipation: 100 Watts
- Channel Mode: Enhancement
- Configuration: Single
- Fall Time: 5 ns
- Rise Time: 8 ns
- Typical Turn-On Delay Time: 11.5 ns
- Mounting Style: Through Hole
- Package/Case: TO-220-3
IRF830 IRF 830 500V 4.5A 75W TO-220 N-Channel Power MOSFET 3 Pin IC Power Transistor Field Effect MOSFET IC Electronic Components
IRF840 IRFS840 N-channel 8A 500V Power MOSFET
