₹46.00Original price was: ₹46.00.₹35.00Current price is: ₹35.00.
IRF3710 is anN-Channel Power MOSFET which utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area, this design enables the transistor for fast switching speeds and ruggedized device design. IRF3710 being extremely efficient and reliable device, therefore used in wide variety of applications. Even the TO-220 package is universally preferred for many commercial-industrial applications at power dissipation levels to Roughly 50 watts. The low thermal resistance and low package cost of the TO-220 bring about its acceptance across the industry.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts.
₹25.00Original price was: ₹25.00.₹20.00Current price is: ₹20.00.
1. Ultra Low On-Resistance : -rDS(ON)= 0.064Ω, VGS = 10V2. Simulation Models
(1) Temperature Compensated PSPICE and SABER Electrical Models
(2) Spice and SABER Thermal Impedance Models3. Peak Current vs Pulse Width Curve4. UIS Rating Curve Absolute Maximum Ratings1. Drain to Source Voltage : VDSS = 100 V2. Drain to Gate Voltage (RGS = 20kΩ): VDGR = 100 V3. Gate to Source Voltage : VGS = ±20 V4. Drain Current : ID = 22A5. Power Dissipation: Pd = 85 W